The Seed Layers Technology LLC patent portfolio consists of the following patents:

6,518,668 – Multiple Seed Layers for Metallic Interconnects (View on Google Patents | Download PDF)

6,136,707 – Seed Layers for Interconnects and Methods for Fabricating Such Seed Layers (View on Google Patents | Download PDF)

6,610,151 – Seed Layers for Interconnects and Methods and Apparatus for Their Fabrication (View on Google Patents | Download PDF)

6,903,016 – Combined Conformal/Non-Conformal Seed Layers for Metallic Interconnects (View on Google Patents | Download PDF)

6,924,226 – Methods for Making Multiple Seed Layers for Metallic Interconnects (View on Google Patents | Download PDF)

7,105,434 – Advanced Seed Layery for Metallic Interconnects (View on Google Patents | Download PDF)

7,199,052 – Seed Layers for Metallic Interconnects (View on Google Patents | Download PDF)

7,282,445 – Multiple Seed Layers for Interconnects (View on Google Patents | Download PDF)

7,550,386 – Advanced Seed Layers for Interconnects (View on Google Patents | Download PDF)

7,682,496 – Apparatus for Depositing Seed Layers (View on Google Patents | Download PDF)

About the Patented Technology

Not surprisingly, filling of high aspect ratio trenches is slow and often results in poor or incomplete filling (voids). The prior art would address this problem with copper electrolytes that have a positive effect on fill rate and consistency, among other methods. Both the prior art and the patented inventions teach that due to the poor adhesion of copper to oxide surfaces, a barrier layer is first deposited on the semiconductor device (this includes both the trench and top surface).

In the prior art, a single copper seed layer is then applied, often resulting in the incomplete filling described above. The claimed method addresses this problem by a two step seed layer deposition process. Specifically, a first conforming (covering the entirety of the barrier layer) seed layer is applied, followed by a second non-conforming (covering less than the entirety of the seed layer) layer.